J. Mater. Chem. C, 2015, Accepted ManuscriptDOI: 10.1039/C5TC00062A, CommunicationYANG XI, Martha Isabel Serna, Lanxia cheng, Yang Gao, Mahmoud Baniasadi, Rodolfo Antonio Rodriguez-Davila, Jiyoung Kim, Manuel Angel Quevedo-Lopez, Majid MinaryWe report a simple and selective solution method to prepare Molybdenum Disulfide (MoS2) thin films for functional thin film transistors (TFTs). The selective area solution-processed MoS2 grows on top and...The content of this RSS Feed (c) The Royal Society of Chemistry
The bandgap of a series of oxide semiconductors is narrowed by a quick and facile arc-melting method. A defective structure is formed in the fast melting and cooling process without changing its phase structure. Enhanced optical and electrical properties are found in the arc-melted oxide, such as enhanced photocatalytic properties of the arc-melted ZnO under visible light.
Publication date: June 2015 Source:Organic Electronics, Volume 21 Author(s): Vincenzo Pecunia , Kulbinder Banger , Antony Sou , Henning Sirringhaus We have developed a novel solution-based integration scheme featuring organic and metal-oxide semiconductors with a polymeric gate dielectric. The integration relies on a facile subtractive patterning technique for the semiconductors, which, through the selection of an appropriate etch stopper, leads to ideal transistor performance. We utilized this novel integration scheme to fabricate self-aligned transistors and logic circuits with a high-mobility p-type conjugated polymer and an n-type amorphous oxide semiconductor, along with a composite polymeric gate dielectric, all solution-deposited by spin coating. The resulting complementary logic gates are capable of rail-to-rail transitions, low-voltage operation down to a 3.5V power supply, and ample noise margins. Thanks to the self-aligned-gate approach and the state-of-the-art balanced mobilities of the selected semiconductors, our logic gates achieve megahertz operation, thus demonstrating the strength of our hybrid integration scheme. Graphical abstract
Publication date: Available online 28 February 2015 Source:Thin Solid Films Author(s): Seonno Yoon , Jangwon Bang , Yunwon Song , Jungwoo Oh A complementary metal-oxide semiconductor (CMOS)-compatible Au-free Si/Ti/Al/Cu ohmic metallization scheme has been developed for AlGaN/GaN power transistors epitaxially grown on Si substrates. The Si/Ti/Al/Cu metallization exhibited a low specific contact resistance of 3.5×10-6 Ω-cm2 after optimizing the Si interface layer. The ohmic metal surface was smooth with a root-mean-square roughness of 24nm. Physical characterization confirmed that Cu diffusion into the semiconductor was suppressed because locally segregated TiSix alloys acted as a barrier. Shallow interfacial reactions of localized TiN alloys occurred in the AlGaN/GaN heterostructure. Without a designated diffusion barrier as in conventional Au-based metallization, the contact resistivity and surface morphology in Si/Ti/Al/Cu improved significantly, which helps address critical challenges associated with the fabrication of AlGaN/GaN power transistors on a Si CMOS platform.